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High-Gain IGBT w/ Diode
High-Speed PT Trench IGBT
IXGH24N60C4D1
VCES IC110 VCE(sat) tfi(typ)
TO-247 AD
= = =
600V 24A 2.70V 68ns
Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC TC TC TC = 25C = 110C = 110C = 25C, 1ms
Maximum Ratings 600 600 20 30 56 24 18 130 ICM = 48 @ VCES 190 -55 ... +150 150 -55 ... +150 V V V V A A A A A W C C C C C Nm/lb.in. g Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts
G C E Tab C = Collector Tab = Collector
G = Gate E = Emitter
Features Optimized for Low Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Package Advantages High Power Density Low Gate Drive Requirement
VGE = 15V, TVJ = 125C, RG = 10 Clamped Inductive Load TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque
300 260 1.13/10 6
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250A, VCE = VGE TJ = 125C VCE = 0V, VGE = 20V IC = IC110, VGE = 15V, Note 1 TJ = 125C VCE = VCES, VGE= 0V
Characteristic Values Min. Typ. Max. 4.0 6.5 V
10 A 1.5 mA 100 2.28 1.95 2.70 nA V V
(c) 2011 IXYS CORPORATION, All Rights Reserved
DS100254B(04/11)
IXGH24N60C4D1
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. 10 17 875 86 28 64 IC = IC110, VGE = 15V, VCE = 0.5 * VCES 7 28 Inductive Load, TJ = 25C IC = IC110, VGE = 15V VCE = 360V, RG = 10 Note 2 21 33 0.40 143 68 0.30 20 32 0.63 130 118 0.50 0.21 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.65 C/W C/W
e
TO-247 (IXGH) Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS
IC = IC110, VCE = 10V, Note 1 VCE = 25V, VGE = 0V, f = 1MHz
1
2
3
P
Terminals: 1 - Gate 3 - Emitter
2 - Collector
Dim.
0.55
Inductive Load, TJ = 125C IC = IC110, VGE = 15V VCE = 360V, RG = 10 Note 2
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) VF IRM trr RthJC IF = 15A, VGE = 0V, Note 1 Characteristic Values Min. Typ. Max. 2.7 TJ = 150C 1.6 2.6 100 25 V V A ns ns
TJ = 100C IF = 15A, VGE = 0V, -diF/dt = 100A/s, TJ = 100C VR = 100V IF = 1A, VGE = 0V, -diF/dt = 100A/s, VR = 30V
1.6 C/W
Notes:
1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2
IXGH24N60C4D1
Fig. 1. Output Characteristics @ T J = 25C
50 45 40 35 VGE = 15V 13V 11V 10V 9V
Fig. 2. Extended Output Characteristics @ T J = 25C
200 180 160 VGE = 15V
8V
140
14V 13V 12V 11V 10V 9V 8V 7V
30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 6V 7V
IC - Amperes
IC - Amperes
120 100 80 60 40
5V
20 0 0 5 10 15 20 25
6V 30
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ T J = 125C
50 45 40 35 VGE = 15V 13V 11V 10V
Fig. 4. Dependence of VCE(sat) on Junction Temperature
1.3 VGE = 15V 1.2 I = 48A
9V
C
8V
30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 5V 3.5 4 6V 7V
VCE(sat) - Normalized
1.1 1.0 I 0.9 0.8 0.7 0.6 0 25 50 75 100 125 150 I
C C
IC - Amperes
= 24A
= 12A
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
5.0 TJ = 25C 4.5
Fig. 6. Input Admittance
60 TJ = - 40C 25C 125C
50
4.0
40
IC - Amperes
11 12 13 14 15
VCE - Volts
3.5 I 3.0 24A 12A 2.0 5 6 7 8 9 10
C
30
= 48A
20
2.5
10
0 3 4 5 6 7 8 9
VGE - Volts
VGE - Volts
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXGH24N60C4D1
Fig. 7. Transconductance
24 TJ = - 40C 25C
Fig. 8. Gate Charge
16 14 12 10 8 6 4 VCE = 300V I C = 24A I G = 1mA
20
g f s - Siemens
16 125C 12
8
4
VGE - Volts
55 60
2 0
0 5 10 15 20 25 30 35 40 45 50
0
0
10
20
30
40
50
60
70
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000
55
Fig. 10. Reverse-Bias Safe Operating Area
50 45
f = 1 MHz
Capacitance - PicoFarads
1,000
Cies
40
IC - Amperes
35 30 25 20 15 10 TJ = 125C RG = 10 dv / dt < 10V / ns
100
Coes
Cres 10 0 5 10 15 20 25 30 35 40
5 0 100
150
200
250
300
350
400
450
500
550
600
650
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z (th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH24N60C4D1
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
3.2 2.8 2.4 Eoff VCE = 360V Eon 3.2
1.4 1.2 1 Eoff VCE = 360V Eon
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
1.5
---
TJ = 125C , VGE = 15V
2.8 2.4 2
----
RG = 10 , VGE = 15V
1.3 1.1
Eon - MilliJoules
Eoff - MilliJoules
2 1.6 1.2 0.8 0.4 0 10 20 30 40 50 60 70 80 90 I
C
Eoff - MilliJoules
Eon - MilliJoules
I C = 48A
0.8 0.6 0.4 0.2 0 12 16 20 24 28 32 36 40 44 48 TJ = 125C
0.9 0.7 0.5 0.3 0.1
1.6 1.2 0.8 = 24A 0.4 0 100
TJ = 25C
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
1.4 1.2 1 Eoff VCE = 360V Eon 1.7
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
180 170 160 800
---1.5 I C = 48A 1.3
tfi
VCE = 360V
td(off) - - - -
RG = 10 , VGE = 15V
TJ = 125C, VGE = 15V
700 600 500
t d(off) - Nanoseconds
t f i - Nanoseconds
Eoff - MilliJoules
Eon - MilliJoules
150 140 130 120 110 100 10 20 30 40 50 60 70 80 90 I = 48A I
C = 24A
0.8 0.6 0.4 0.2 0 25 35 45 55 65 75 85 95 105 115
1.1 0.9 0.7 0.5 0.3 125
C
400 300 200 100 0 100
I C = 24A
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
180 160 140 180
180 160 140 120 100 I 80 60 40 25
C
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
170
tfi
VCE = 360V
td(off) - - - -
RG = 10 , VGE = 15V
170 160 150 140 TJ = 25C 130 120 110 100
tfi
VCE = 360V
td(on) - - - -
RG = 10 , VGE = 15V
160 150 140 130 120 110 100 125
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f i - Nanoseconds
120 100 80 60 40 20 12 16 20 24 28 32 36 40 44 48
TJ = 125C
t f i - Nanoseconds
= 48A
I C = 24A
35
45
55
65
75
85
95
105
115
IC - Amperes
TJ - Degrees Centigrade
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXGH24N60C4D1
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
160 140 120 80
100 90 80
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
32
tri
VCE = 360V
td(on) - - - -
70 60 I
C
tri
VCE = 360V
td(on) - - - -
30 28
TJ = 125C, VGE = 15V
RG = 10 , VGE = 15V
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r i - Nanoseconds
100 80 60 40 20 0 10 20 30 40 50 60 70 80
= 48A
t r i - Nanoseconds
70 60 50 40 30 20 TJ = 125C TJ = 25C
26 24 22 20 18 16 14 12 12 16 20 24 28 32 36 40 44 48
50 40
I
C
= 24A
30 20 10 0 100
10 0
90
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
130 30
tri
110 VCE = 360V
td(on) - - - 28
RG = 10 , VGE = 15V
t d(on) - Nanoseconds
t r i - Nanoseconds
90 I 70
C
26 = 48A 24
50 I C = 24A 30
22
20
10 25 35 45 55 65 75 85 95 105 115
18 125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_24N60C4D1(L2)3-15-10
IXGH24N60C4D1
Fig. 21. Forward Current IF vs. VF
Fig. 22. Reverse Recovery Change Qr vs. -diF/dt
Fig. 23. Peak Reverse Current IRM vs. -diF/dt
Fig. 24. Dynamic Parameters Qr, IRM vs. TVJ
Fig. 25. Recovery Time tr vs. -diF/dt
Fig. 26. Peak Forward Voltage VFR , tr vs. -diF/dt
Fig. 27. Transient Thermal Resistance Junction to Case
(c) 2011 IXYS CORPORATION, All Rights Reserved

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